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HgCdTe (MCT) Photovoltaic DetectorPEM-10.6
2.0 – 12.0 µm, ambient temperature, photoelectromagnetic
PEM-10.6 is an uncooled HgCdTe photovoltaic IR detector based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.
Features
Spectral range from 2.0 to 12.0 µm
Ambient temperature operation
No bias required
No 1/f noise
Operation from DC to high frequency
Sensitive to IR radiation polarisation
Specification (Ta = 20°C)
Parameter |
PEM-10.6 |
|
|
Active element material
|
epitaxial HgCdTe heterostructure |
|
|
Optimum wavelength λopt, µm
|
10.6 |
|
Detectivity D*(λpeak), cm ⋅Hz1/2/W |
≥2.0×107
|
|
|
Detectivity D*(λopt), cm
⋅Hz1/2/W |
≥1.0×107
|
|
| Current responsivity-active area product Ri(λopt)·L, A·mm/W |
≥0.002
|
|
|
Time constant τ, ns
|
≤1.2 |
|
|
Resistance R, Ω
|
≥40 | |
|
Active area A, mm×mm
|
1×1, 2×2 |
|
|
Package
|
PEM-SMA | PEM-TO8 |
|
Acceptance angle, Φ
|
~48° | ~52° |
|
Window
|
wZnSeAR |
|
Spectral response (Ta = 20°C)
Mechanical layout, mm
PEM-SMA package
PEM-TO8 package
Access to file
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Application notes
Temperature sensor characteristics
Dedicated preamplifiers
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