Our photodiodes cover a broad spectral range, from near-infrared and ultraviolet wavelengths to high-energy regions. Photodiodes are available in metal, ceramic, and plastic packages, as well as module types. Custom designs are also available.
APDs are photodiodes with internal gain produced by the application of a reverse voltage. They have a higher signal-to-noise ratio (SNR) than PIN photodiodes, as well as fast time response, low dark current, and high sensitivity. Spectral response range is typically within 200 - 1150 nm.
The photo IC is an intelligent optical sensor with diverse functions and integrates a photodiode with signal processing IC in the same package.
Our Multi-Pixel Photon Counter (MPPC), also known as silicon photomultiplier (SiPM), is a solid state photomultiplier comprised of a high density matrix of Geiger-mode-operated avalanche photodiodes also known as SPAD (single-photon avalanche photodiode). These SPADs have high internal gain which enable single photon detection. The Hamamatsu SiPM features low dark count, high photon detection efficiency, excellent timing resolution, low bias voltage operation, ruggedness, resistance to excess light, and immunity to magnetic fields. They are well-suited to single photon counting and other ultra-low light applications.
PMTs suitable for applications that require high speed, low noise, and high gain. Our PMTs include bare tubes, assemblies, and modules offering a wide selection of photosensitive areas and spectral responses.
Sensors and modules for infrared light detection:
Sensors and modules for x-ray detection.
Sensors used for distance measurement and position detection. Suitable for many applications, such as LiDAR.
Sensor modules and assemblies for specific applications.
Image splitting optics provide one pair of dual wavelength images to cameras.
A leader in the scientific CMOS camera revolution, Hamamatsu has a camera to fit almost any budget or application.
The CCD cameras capture optical signals with high-sensitive.
EM-CCDs revolutionized low-light imaging with on-chip amplification. Even with advances in CMOS, EM-CCD cameras with large pixels and back-thinned sensitivity are the best choice for extremely low-light, low-background applications. Refined over numerous generations for superior usability, these cameras offer fine control of camera features and image quality.
InGaAs cameras bridge the gap between NIR wavelengths in the 950-1700 nm range, where silicon detectors are no longer sensitive. Our products capture images with QVGA to VGA resolution and our extensive experience with InGaAs sensors allows us to offer cameras with exquisite image contrast and quality.
High-speed imaging of moving samples is a challenging even in bright conditions, but our TDI cameras turn linear movement of the sample into an advantage by coordinating signal accumulation in the sensor with sample movement. These cameras are also well-suited for low-light scanning applications that are too dim to for a line scan sensor.
Light sources available in a variety of intensities, cooling methods, and shapes. Suitable for a diverse range of applications, including UV adhesive curing and UV ink drying.
Our lamps deliver high stability and long lifetimes. Light measurement technology is utilized in many applications including chemical analysis, medical diagnostic testing, environmental monitoring, and academic research fields.
Our lamp modules and lamp units are assembled with a matching power supply and other functions making them suitable for a wide range of user applications.
SWIR (short-wavelength infrared) imaging is a great solution for nondestructive inspection. It sees under the surface, differentiates materials based on their SWIR spectral signatures, and offers a safe and convenient way to ensure product quality. Example applications include checking liquid volumes in packages, inspecting contents of sealed containers, and detecting damages and contaminants in agricultural products. In addition, applications in the semiconductor industry include Si wafer pattern inspection and solar cell defect detection.
Integrating SWIR imaging into production lines requires fast line rate, high-sensitivity cameras such as the new C15333-10E InGaAs line scan camera from Hamamatsu.
Released on November 1, the C15333-10E InGaAs line scan camera joins Hamamatsu’s long-established product line of SWIR and NIR (near-infrared) imaging technologies, which include InGaAs area cameras for high-quality inspection. This new camera is ideal for real-time, inline nondestructive inspection using SWIR imaging, and has the following features:
Hamamatsu Photonics now offers a new micro PMT “R12900U” housing the world’s smallest photomultiplier tube in a miniature plastic package designed to easily mount on electronic circuit boards. Installing this new micro PMT to serve as a photodetector means environmental analyzers, portable medical diagnostic devices and so on can now be drastically downsized for convenient use anywhere needed including patient bedsides.
By utilizing compound opto-semiconductor manufacturing technology developed in-house over many years, we are the first in the world to succeed in mass-producing a compound opto-semiconductor (Type-II superlattice infrared detector)* not containing harmful mercury (Hg) and cadmium (Cd) but able to detect mid-infrared light to a wavelength of 14.3 micrometers (a micrometer, abbreviated μm, is one millionth of a meter). Mercury and cadmium are common materials used for mid-infrared detectors but are restricted substances under the RoHS directive issued by EU that prohibits use of certain hazardous substances in electrical and electronic products sold in the EU market. So our new product will likely replace currently available mid-infrared detectors that contain restricted substances. Our new product will prove ideal for analytical instruments that rely on mid-infrared light to identify substances contained in the air, foods, and drugs.
Hamamatsu Photonics K.K. has developed a novel 3D fluorescence scanning method called "Zyncscan™" that performs x-z plane scans using a light-sheet for cell-based fluorescence assays in microplates. This technology provides an x-z plane scan using a light-sheet for a whole 96/384/1536-well microplate, allowing users to obtain 3D fluorescence images of whole wells in xy: 2–3 μm and z: 6–7 μm voxel resolution for ≤ 300 μm thickness from the well bottom within a few minutes per color. This technology also allows for ultra-high level separation of cell fluorescence signals from the background, which makes it possible to obtain cell fluorescence images in the cell culture mediums containing serum and with fluorescent dyes (i.e., no need to wash out fluorescent dyes).
By applying compound opto-semiconductor manufacturing technology fostered in-house over many years, we designed and developed a new area image sensor G14674-0808W made of indium gallium arsenide (InGaAs) capable of detecting short-wavelength-infrared light up to 2.55 µm which is the world’s longest wavelength detectable by this type of area image sensor. Installing this new InGaAs image sensor into hyperspectral cameras for plastic recycling will boost the plastic recycling rate since hyperspectral cameras can screen and sort plastics containing flame-retardant resin to separate them out from other plastics, which has been extremely difficult up till now.
Hamamatsu Photonics has newly developed the world’s smallest (in-house survey), grating spectrometer “SMD series mini-spectrometer C14384MA” offering high near-infrared sensitivity, compact size, light weight and low cost. Our C14384MA has a cubic size of about 1/40th, and weight of about 1/30th that of our MS series mini-spectrometers with sensitivity in the same near-infrared range, yet the sensitivity is about 50 times higher. This makes the C14384MA ideal for applications where real-time on-site measurement is required such as quality inspections of food or agricultural crops and even environmental analysis from a quadcopters or drones.
A new product has been added to the MEMS-FPI*spectrum sensor lineup of ultra-compact near infrared spectrum sensors.
The new C14273 sensor has more sensitivity in the long-wavelength band than the 2 current types. The spectral response range is between 1.75 and 2.15 μm.
Hamamatsu Photonics has newly developed ionization-assisting substrates called the DIUTHAME series. DIUTHAME is an acronym for Desorption Ionization Using Through Hole Alumina MEmbrane that utilize porous alumina to drastically reduce the pretreatment time needed for ionizing a sample or analyte to be analyzed by imaging mass spectrometry. To complete sample-pretreatment for mass spectrometry, all one has to do is place the DIUTHAME substrate on the sample. This shortens the pretreatment time to about one tenth that of Matrix-Assisted Laser Desorption/Ionization or MALDI which is a mainstream ionization technique for mass spectrometry. DIUTHAME is also usable for measurement with existing MALDI-TOF-MS.
The S13774 is a CMOS linear image sensor developed for industrial cameras that require high-speed scanning. The column-parallel readout system, which has a readout amplifier and an A/D converter for each pixel, allows high-speed readout. For the A/D converter resolution, either 10-bit (high-speed mode: 100 klines/s max.) or 12-bit (low-speed mode: 25 klines/s max.) can be selected. Image data is output serially in 180 MHz LVDS format.
Hamamatsu has developed the low cost 1D InGaAs image sensor G13913 series by employing a small size LCC (Leadless Chip-Carrier) package. 1D InGAs image sensors have been used widely for near infrared spectroscopy. There is growing demand on a sensor for downsizing and current consumption reduction.
A back-illuminated structure InGaAs array chip of 128 ch or 256 ch is adopted to the G13913 series, realizing both small size and low cost. Unlike a conventional 1D InGaAs image sensor mainly for a large size instrument, the new features of the G13913 series will make installation in a portable equipment possible.