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  • Offer Profile
  • VIGO System S.A. is a world’s leading manufacturer of standard and customized high-tech uncooled photodetectors of middle and long wavelength range. In the 80s, at the Military Technical Academy, a team led by prof. dr. hab. Joseph Piotrowski developed a unique technology for the production of detectors working without cryogenic cooling and then implemented it into a newly created company. In the 80s, at the Military Technical Academy, a team led by prof. dr. hab. Joseph Piotrowski developed a unique technology for the production of detectors working without cryogenic cooling and then implemented it into a newly created company.

    Detectors produced in VIGO are used in various areas such as:

    • Industry– laser power control and calibration;
    • Defense and security– smart munitions, early warning systems;
    • Environmental protection – gas analysis, real-time water quality control;
    • Healthcare – non-invasive blood analysis;
    • Transport – analysis of temperature distribution in fast moving objects;
    • Research and development – precise, non-destructive spectroscopy.
Product Portfolio
  • Infrared Detectors

  • Detectors based on HgCdTe material that offer the highest performance out of all discovered materials suitable for Infrared detection. Our detectors are optimized for MWIR (3-8μm) and LWIR (8-16μm) spectral ranges. It is perfect for creating gas sensors for industry and environmental protection. They are an ideal solution for CRDS, TDLAS or FTIR spectroscopy. Very high parameters of detection and speed of operation make them ideal for applications such as leak detection, transport safety or defense applications. We also offer InAs or InAsSb based detectors that are RoHS compliant and suitable for the consumer market.
      • HgCdTe (MCT) photovoltaic detectors

      • Photovoltaic detectors (photodiodes) are semiconductor structures with one (PV) or multiple (PVM) , homo- or heterojunctions. Absorbed photons produce charge carriers that are collected at the contacts, resulting in external photocurrent. Photodiodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. Reverse bias voltage is frequently applied to increase responsivity, differential resistance, reduce the shot noise, improve high frequency performance and increase the dynamic range.
          • Selected Lines

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.4 – 5.5 µm, ambient temperature, optically immersed

                PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.4 – 4.5 µm, ambient temperature, optically immersed

                PVI-4-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 4 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.4 – 4.3 µm, ambient temperature, optically immersed

                PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 4.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.9 – 5.5 µm, ambient temperature, optically immersed

                PVI-2TE-5-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 5.0 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. It also results in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 3.0 – 6.7 µm, ambient temperature, optically immersed

                PVI-2TE-6-1×1-TO8-wZnSeAR-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 3.0 – 6.9 µm, ambient temperature, optically immersed

                PVI-4TE-6-1×1-TO8-wZnSeAR-36 is four-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias Vb may significantly increase response speed and dynamic range. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.0 – 12.0 µm, ambient temperature, multiple junction

                PVM-10.6-1×1-TO39-NW-90 is uncooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.0 – 12.0 µm, two-stage thermoelectrically cooled, multiple junction

                PVM-2TE-10.6-1×1-TO8-wZnSeAR-70 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.0 – 12.0 µm, two-stage thermoelectrically cooled, optically immersed, multiple junction

                PVMI-2TE-10.6-1×1-TO8-wZnSeAR-36 is two-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.0 – 12.0 µm, four-stage thermoelectrically cooled, optically immersed, multiple junction

                PVMI-4TE-10.6-1×1-TO8-wZnSeAR-36 is four-stage thermoelectrically cooled IR photovoltaic multiple junction detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is designed for the maximum performance at  λopt = 10.6 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

              • HgCdTe (MCT) Photovoltaic Detector

              • 2.0 – 12.0 µm, ambient temperature, multiple junction

                PEM-10.6-2×2-PEM-SMA-wZnSeAR-48 is uncooled IR photovoltaic multiple junction HgCdTe detector based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. This device is designed for the maximum performance at λopt = 10.6 µm and especially useful as a large active area detector to detect CW and low frequency modulated radiation. This device is mounted in specialized package with incorporated magnetic circuit inside and SMA signal output connector. 3° wedged zinc selenide anti-reflection coated window prevents unwanted interference effects and protects against pollution.

            • All HgCdTe (MCT) photovoltaic detectors

                • PV

                • 3-8 μm IR PHOTOVOLTAIC DETECTORS

                  The PV-λopt photodetectors series (λopt – optimal wavelength in micrometers) feature IR photovoltaic detector.

                  This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.

                  • PV-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥6.5x109cm·Hz1/2/W, Time constant τ: ≤350ns
                  • PV-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥5.0x10cm·Hz1/2/W9, Time constant τ: ≤260ns
                  • PV-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥3.0x109cm·Hz1/2/W, Time constant τ: ≤150ns
                  • PV-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥1.0x109cm·Hz1/2/W, Time constant τ: ≤120ns
                  • PV-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥5.0x108cm·Hz1/2/W, Time constant τ: ≤80ns
                • PV-2TE

                • 2-12 μm IR PHOTOVOLTAIC DETECTORS THERMOELECTRICALLY COOLED

                  The PV-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.

                  • PV-2TE-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥7.0x1010cm·Hz1/2/W, Time constant τ: ≤280ns
                  • PV-2TE-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥4.0x1010cm·Hz1/2/W, Time constant τ: ≤200ns
                  • PV-2TE-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥3.0x1010cm·Hz1/2/W, Time constant τ: ≤100ns
                  • PV-2TE-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥9.0x109cm·Hz1/2/W, Time constant τ: ≤80ns
                  • PV-2TE-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥2.0x109cm·Hz1/2/W, Time constant τ: ≤50ns
                  • PV-2TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥2.0x108cm·Hz1/2/W, Time constant τ: ≤45ns
                  • PV-2TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x108cm·Hz1/2/W, Time constant τ: ≤10ns
                • PV-3TE

                • 1-15 μm THREE-STAGE THERMOELECTRICALLY COOLED PHOTOCONDUCTIVE DETECTORS

                  PC-3TE series features three-stage thermoelectrically cooled IR photoconductive detectors based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

                  • PV-3TE-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥1.0x1011cm·Hz1/2/W, Time constant τ: ≤280ns
                  • PV-3TE-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥7.0x1010cm·Hz1/2/W, Time constant τ: ≤200ns
                  • PV-3TE-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥4.0x1010cm·Hz1/2/W, Time constant τ: ≤100ns
                  • PV-3TE-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥1.0x1010cm·Hz1/2/W, Time constant τ: ≤80ns
                  • PV-3TE-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥4.0x109cm·Hz1/2/W, Time constant τ: ≤50ns
                  • PV-3TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥3.0x108cm·Hz1/2/W, Time constant τ: ≤45ns
                  • PV-3TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.5x108cm·Hz1/2/W, Time constant τ: ≤10ns
                • PV-4TE

                • 1.0 – 16.0 µm HgCdTe FOUR-STAGE THERMOELECTRICALLY COOLED PHOTOCONDUCTIVE DETECTORS

                  PC-4TE series features four-stage thermoelectrically cooled IR photoconductive detectors based on sophisticated HgCdTe heterostructures for the best performance and stability. The devices are optimized for the maximum performance at λopt. The devices should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The 1/f noise corner frequency increases with the cut-off wavelength. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

                  • PV-4TE-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥1.5x1011cm·Hz1/2/W, Time constant τ: ≤280ns
                  • PV-4TE-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥1.0x1011cm·Hz1/2/W, Time constant τ: ≤200ns
                  • PV-4TE-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥6.0x1010cm·Hz1/2/W, Time constant τ: ≤100ns
                  • PV-4TE-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥1.5x1010cm·Hz1/2/W, Time constant τ: ≤80ns
                  • PV-4TE-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥5.0x109cm·Hz1/2/W, Time constant τ: ≤50ns
                  • PV-4TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥4.0x108cm·Hz1/2/W, Time constant τ: ≤45ns
                  • PV-4TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥2.0x108cm·Hz1/2/W, Time constant τ: ≤25ns
                • PVI

                • 2-8 μm IR PHOTOVOLTAIC DETECTORS OPTICALLY IMMERSED

                  The PVI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in TO39 or BNC  packages without windows. Various windows, other packages and connectors are available upon request.

                  Uncooled, Immersion: Yes

                  • PVI-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥5.0x1010cm·Hz1/2/W, Time constant τ: ≤350ns
                  • PVI-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥4.5x1010cm·Hz1/2/W, Time constant τ: ≤260ns
                  • PVI-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥2.0x1010cm·Hz1/2/W, Time constant τ: ≤150ns
                  • PVI-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥9.0x1010cm·Hz1/2/W, Time constant τ: ≤120ns
                  • PVI-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥4.0x109cm·Hz1/2/W, Time constant τ: ≤80ns
                • PVI-2TE

                • 2-12 μm IR PHOTOVOLTAIC DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                  The PVI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on two-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.

                  Two-stage TE cooled, Immersion: Yes

                  • PVI-2TE-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥5.5x1011cm·Hz1/2/W, Time constant τ: ≤280ns
                  • PVI-2TE-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥3.0x1011cm·Hz1/2/W, Time constant τ: ≤200ns
                  • PVI-2TE-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥2.0x1011cm·Hz1/2/W, Time constant τ: ≤100ns
                  • PVI-2TE-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥6.0x1010cm·Hz1/2/W, Time constant τ: ≤80ns
                  • PVI-2TE-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥2.0x1010cm·Hz1/2/W, Time constant τ: ≤50ns
                  • PVI-2TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥2.0x109cm·Hz1/2/W, Time constant τ: ≤45ns
                  • PVI-2TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x1010cm·Hz1/2/W, Time constant τ: ≤10ns  
                • PVI-3TE

                • 2-12 μm IR PHOTOVOLTAIC DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                  The PVI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on three-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.

                  • PVI-3TE-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥7.0x1011cm·Hz1/2/W, Time constant τ: ≤280ns
                  • PVI-3TE-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥5.0x1011cm·Hz1/2/W, Time constant τ: ≤200ns
                  • PVI-3TE-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥3.0x1011cm·Hz1/2/W, Time constant τ: ≤100ns
                  • PVI-3TE-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥8.0x1010cm·Hz1/2/W, Time constant τ: ≤80ns
                  • PVI-3TE-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥3.0x1010cm·Hz1/2/W, Time constant τ: ≤50ns
                  • PVI-3TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥3.0x109cm·Hz1/2/W, Time constant τ: ≤45ns
                  • PVI-3TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.5x109cm·Hz1/2/W, Time constant τ: ≤10ns
                • PVI-4TE

                • 2-12 μm IR PHOTOVOLTAIC DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                  The PVI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photovoltaic detector on four-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength can be optimized upon request. Reverse bias may significantly increase speed of response and dynamic range. It results also in improved performance at high frequencies, but 1/f noise that appears in biased devices may reduce performance at low frequencies. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.

                  • PVI-4TE-3: Optimal wavelength λopt: 3.0µm, Detectivity D*(λopt): ≥8.0x1011cm·Hz1/2/W, Time constant τ: ≤280ns
                  • PVI-4TE-3.4: Optimal wavelength λopt: 3.4µm, Detectivity D*(λopt): ≥7.0x1011cm·Hz1/2/W, Time constant τ: ≤200ns
                  • PVI-4TE-4: Optimal wavelength λopt: 4.0µm, Detectivity D*(λopt): ≥4.0x1011cm·Hz1/2/W, Time constant τ: ≤100ns
                  • PVI-4TE-5: Optimal wavelength λopt: 5.0µm, Detectivity D*(λopt): ≥1.0x1011cm·Hz1/2/W, Time constant τ: ≤80ns
                  • PVI-4TE-6: Optimal wavelength λopt: 6.0µm, Detectivity D*(λopt): ≥4.0x1010cm·Hz1/2/W, Time constant τ: ≤50ns
                  • PVI-4TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥4.0x109cm·Hz1/2/W, Time constant τ: ≤45ns
                  • PVI-4TE-10: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥2.0x109cm·Hz1/2/W, Time constant τ: ≤25ns
                • PVM

                • 8-11 μm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS

                  The PVM-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction photovoltaic detector. The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request

                  • PVM-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥6.5x107cm·Hz1/2/W, Time constant τ: ≤4ns
                  • PVM-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x107cm·Hz1/2/W, Time constant τ: ≤1.5ns
                • PVM-2TE

                • 8-11 μm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS THERMOELECTRICALLY COOLED

                  The PVM-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction photovoltaic detector on two-stage thermoelectrical cooler.
                  The devices are optimized for the maximum performance at λopt, large area devices. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available..

                  • PVM-2TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥3.0x108cm·Hz1/2/W, Time constant τ: ≤4ns
                  • PVM-2TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x108cm·Hz1/2/W, Time constant τ: ≤3ns
                • PVMI

                • 8-11 μm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS OPTICALLY IMMERSED

                  The PVMI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction optically immersed photovoltaic detector.
                  The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.
                  • PVMI-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥3.0x108cm·Hz1/2/W, Time constant τ: ≤4ns
                  • PVMI-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x108cm·Hz1/2/W, Time constant τ: ≤1.5ns
                • PVMI-2TE

                • 8-11 μm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                  The PVMI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction optically immersed photovoltaic detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.
                  • PVMI-2TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥2.0x109cm·Hz1/2/W, Time constant τ: ≤4ns
                  • PVMI-2TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x109cm·Hz1/2/W, Time constant τ: ≤3ns
                • PVMI-3TE

                • 8-11 μm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                  The PVMI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction optically immersed photovoltaic detector on three-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.
                  • PVMI-3TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥3.0x109cm·Hz1/2/W, Time constant τ: ≤4ns
                  • PVMI-3TE-10.6: Optimal wavelength λopt: 10,6µm, Detectivity D*(λopt): ≥1.5x109cm·Hz1/2/W, Time constant τ: ≤3ns
                • PVMI-4TE

                • 8-11 µm IR PHOTOVOLTAIC MULTIPLE JUNCTION DETECTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                  The PVMI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR multiple junction optically immersed photovoltaic detector on four-stage thermoelectrical cooler.

                  The devices are optimized for the maximum performance at λopt. Highest performance and stability are achieved by application of variable gap HgCdTe semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.

                  • PVMI-4TE-8: Optimal wavelength λopt: 8.0µm, Detectivity D*(λopt): ≥6.0x109cm·Hz1/2/W, Time constant τ: ≤4ns
                  • PVMI-4TE-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥2.0x109cm·Hz1/2/W, Time constant τ: ≤3ns
                • PEM

                • The PEM series detectors operate on the photoelectromagnetic effect in the semiconductors. The devices are typically optimized for the best performance at 10.6 μm.

                  The detector includes active element based on (HgCd)Te band gap engineered with selected composition and doping profiles, and miniature permanent magnets to produce a magnetic field. The PEM detectors are well suited for heterodyne detection of 10.6 μm radiation. Exhibiting no flicker noise, they can be at the same time used for detection of CW and low frequency modulated radiation in the whole 2 to 11 μm spectral range. Custom devices such as single elements of various sizes, quadrant cells and multielement arrays, various specialized packages and connectors are available upon request. Standard detectors are available in specialized PEM packages (with SMA connectors) with wZnSeAR windows.

                  • PEM-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x107cm·Hz1/2/W, Time constant τ: ≤1.2ns
                • PEMI

                • 2.0 – 12.0 µm, ambient temperature, optically immersed, photoelectromagnetic

                  PEMI-10.6 is an uncooled HgCdTe photovoltaic optically immersed IR detectors based on photelectromagnetic effect in the semiconductor – spatial separation of optically generated electrons and holes in the magnetic field. The device is designed for the maximum performance at 10.6 µm and especially useful as a large active area detectors to detect CW and low frequency modulated radiation. These device is mounted in specialized packages with incorporated magnetic circuit inside. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects and protects against pollution.

                  • PEMI-10.6: Optimal wavelength λopt: 10.6µm, Detectivity D*(λopt): ≥1.0x108cm·Hz1/2/W, Time constant τ: ≤1.2n
              • HgCdTe (MCT) photoconductive detectors

              • Photoconductive detectors based on the photoconductive effect. Infrared radiation generates charge carriers in the semiconductor active region decreasing its resistance. The resistance change is sensed as a current change by applying a constant voltage bias. The devices are characterized by near linear current-voltage characteristics. The electric field in photoconductors is constant across the device.
                  • Selected Line

                        • PCI-3TE-12-1×1-TO8-wZnSeAR-36

                        • 1.0 – 14.0 µm, three-stage thermoelectrically cooled, optically immersed

                          PCI-3TE-12-1×1-TO8-wZnSeAR-36 is a three-stage thermoelectrically cooled IR photoconductor, based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at λopt = 12 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Photoconductive detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. 3° wedged zinc selenide anti-reflection coated (wZnSeAR) window prevents unwanted interference effects.

                    • All HgCdTe (MCT) photoconductive detectors

                        • PC

                        • 2-11 µm IR PHOTOCONDUCTORS

                          The PC-λopt (λopt - optimal wavelength in micrometers) feature IR photoconductive detector.

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Non-immersion
                          • Cooling: No
                          • Package: BNC T039
                          • Window: No

                          This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (< 20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing.

                          Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.

                          • PC-4: Wavelength: 4, Detectivity: ≤2,0x10^9, Time constant: ≤12000
                          • PC-5: Wavelength: 5, Detectivity: ≤1,0x10^9, Time constant: ≤5000
                          • PC-6: Wavelength: 6, Detectivity: ≤3,0x10^8, Time constant: ≤500
                          • PC-9: Wavelength: 9, Detectivity: ≤2,0x10^7, Time constant: ≤10
                          • PC-10,6: Wavelength: 10,6, Detectivity: ≤9,0x10^6, Time constant: ≤3
                        • PC-2TE

                        • 2-13 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Non-immersion
                          • Cooling: Two-stage
                          • Package: TO8, TO66

                          The PC-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on two-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (~0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.

                          • PC-2TE-4: Wavelength: 4, Detectivity: ≤2,0x10^10, Window: wedged Al₂O₃, Time constant: ≤30000
                          • PC-2TE-5: Wavelength: 5, Detectivity: ≤1,0x10^10, Window: wedged Al₂O₃, Time constant: ≤20000
                          • PC-2TE-6: Wavelength: 6, Detectivity: ≤3,0x10^9, Window: wedged ZnSe AR coated, Time constant: ≤4000
                          • PC-2TE-9: Wavelength: 9, Detectivity: ≤4,5x10^8, Window: wedged ZnSe AR coated, Time constant: ≤40
                          • PC-2TE-10,6: Wavelength: 10,6, Detectivity: ≤1,4x10^8, Window: wedged ZnSe AR coated, Time constant: ≤10
                          • PC-2TE-12: Wavelength: 12, Detectivity: ≤4,5x10^7, Window: wedged ZnSe AR coated, Time constant: ≤3
                          • PC-2TE-13: Wavelength: 13, Detectivity: ≤2,3x10^7, Window: wedged ZnSe AR coated, Time constant: ≤2
                        • PC-3TE

                        • 2-13 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Non-immersion
                          • Cooling: Three-stage
                          • Package: TO8, TO66
                          • Window: wedged ZnSe AR coated

                          The PC-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on three-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows.. Other packages, windows and connectors are also available.

                          • PC-3TE-9: Wavelength: 9, Detectivity: ≤1,0x10^9, Window: wedged ZnSe AR coated, Time constant: ≤60
                          • PC-3TE-10,6: Wavelength: 10,6, Detectivity: ≤2,5x10^8, Window: wedged ZnSe AR coated, Time constant: ≤20
                          • PC-3TE-12: Wavelength: 12, Detectivity: ≤3,0x10^7, Window: wedged ZnSe AR coated, Time constant: ≤5
                          • PC-3TE-13: Wavelength: 13, Detectivity: ≤4,5x10^7, Window: wedged ZnSe AR coated, Time constant: ≤4
                        • PC-4TE

                        • 2-14 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Non-immersion
                          • Cooling: Four-stage
                          • Package: TO8, TO66
                          • Window: wedged ZnSe AR coated

                          The PC-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector on four-stage thermoelectrical cooler. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (ង kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.

                          • PC-4TE-9: Wavelength: 9, Detectivity: ≤2,0x10^9, Window: wedged ZnSe AR coated, Time constant: ≤80
                          • PC-4TE-10,6: Wavelength: 10,6, Detectivity: ≤3,5x10^8, Window: wedged ZnSe AR coated, Time constant: ≤30
                          • PC-4TE-12: Wavelength: 12, Detectivity: ≤2,0x10^8, Window: wedged ZnSe AR coated, Time constant: ≤7
                          • PC-4TE-13: Wavelength: 13, Detectivity: ≤1,0x10^8, Window: wedged ZnSe AR coated, Time constant: ≤6
                          • PC-4TE-14: Wavelength: 14, Detectivity: ≤6,0x10^7, Window: wedged ZnSe AR coated, Time constant: ≤5
                        • PCI

                        • 2-11 µm IR PHOTOCONDUCTORS OPTICALLY IMMERSED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Immersion
                          • Cooling: No
                          • Package: BNC T039
                          • Window: No

                          The PCI-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature IR photoconductive detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. This series is easy to use, no cooling or heatsink needed. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Standard detectors are available in TO39 or BNC packages without windows. Various windows, other packages and connectors are available upon request.

                          • PCI-4: Wavelength: 4, Detectivity: ≤6,0x10^9, Time constant: ≤12000
                          • PCI-5: Wavelength: 5, Detectivity: ≤4,0x10^9, Time constant: ≤5000
                          • PCI-6: Wavelength: 6, Detectivity: ≤1,0x10^8, Time constant: ≤500
                          • PCI-9: Wavelength: 9, Detectivity: ≤1,0x10^8, Time constant: ≤10
                          • PCI-10,6: Wavelength: 10,6, Detectivity: ≤8,0x10^7, Time constant: ≤3
                        • PCI-2TE

                        • 2-13 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Immersion
                          • Cooling: Two-stage
                          • Package: TO8, TO66

                          The PCI-2TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) feature two-stage thermoelectrical cooler IR photoconductive detector, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wAl2O3 or wZnSeAR windows. Other packages, windows and connectors are also available.

                          • PC-2TE-4: Wavelength: 4, Detectivity: ≤4,0x10^10, Window: wedged Al₂O₃, Time constant: ≤30000
                          • PC-2TE-5: Wavelength: 5, Detectivity: ≤2,0x10^10, Window: wedged Al₂O₃, Time constant: ≤20000
                          • PC-2TE-6: Wavelength: 6, Detectivity: ≤1,0x10^10, Window: wedged ZnSe AR coated, Time constant: ≤4000
                          • PC-2TE-9: Wavelength: 9, Detectivity: ≤4,0x10^9, Window: wedged ZnSe AR coated, Time constant: ≤40
                          • PC-2TE-10,6: Wavelength: 10,6, Detectivity: ≤1,0x10^9, Window: wedged ZnSe AR coated, Time constant: ≤10
                          • PC-2TE-12: Wavelength: 12, Detectivity: ≤4,5x10^8, Window: wedged ZnSe AR coated, Time constant: ≤3
                          • PC-2TE-13: Wavelength: 13, Detectivity: ≤2,3x10^8, Window: wedged ZnSe AR coated, Time constant: ≤2
                        • PCI-3TE

                        • 2-13 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Immersion
                          • Cooling: Three-Stage
                          • Package: TO8, TO66
                          • Window: wedged ZnSe AR coated

                          The PCI-3TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) featureIR photoconductive detector on three-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available..

                          • PCI-3TE-9: Wavelength: 9, Detectivity: ≤6,2x10^9, Time constant: ≤60
                          • PCI-3TE-10,6: Wavelength: 10,6, Detectivity: ≤2,5x10^9, Time constant: ≤20
                          • PCI-3TE-12: Wavelength: 12, Detectivity: ≤9,0x10^8, Time constant: ≤5
                          • PCI-3TE-13: Wavelength: 13, Detectivity: ≤4,5x10^8, Time constant: ≤4
                        • PCI-4TE

                        • 2-14 µm IR PHOTOCONDUCTORS THERMOELECTRICALLY COOLED OPTICALLY IMMERSED

                          • Material: MCT
                          • Type: Photoconductive
                          • Immersion: Immersion
                          • Cooling: Four-Stage
                          • Package: TO8, TO66
                          • Window: wedged ZnSe AR coated

                          The PCI-4TE-λopt photodetectors series (λopt - optimal wavelength in micrometers) featureIR photoconductive detector on four-stage thermoelectrical cooler, optically immersed to high refractive index GaAs hyperhemispherical (standard) or hemispherical or any intermediate lens (as option) for different acceptance angle and saturation level. The devices are optimized for the maximum performance at λopt. Cut-on wavelength is limited by GaAs transmittance (∼0.9 µm). Bias is needed to operate photocurrent. Performance at low frequencies (<20 kHz) is reduced due to 1/f noise. Highest performance and stability are achieved by application of variable gap (HgCd)Te semiconductor, optimized doping and sophisticated surface processing. Custom devices with quadrant cells, multielement arrays, different windows, lenses and optical filters are available upon request. Standard detectors are available in TO8 packages with wZnSeAR windows. Other packages, windows and connectors are also available.

                          • PCI-4TE-9: Wavelength: 9, Detectivity: ≤1,0x10^10, Time constant: ≤80
                          • PCI-4TE-10,6: Wavelength: 10,6, Detectivity: ≤3,0x10^9, Time constant: ≤30
                          • PCI-4TE-12: Wavelength: 12, Detectivity: ≤2,0x10^9, Time constant: ≤7
                          • PCI-4TE-13: Wavelength: 13, Detectivity: ≤1,0x10^9, Time constant: ≤6
                          • PCI-4TE-14: Wavelength: 14, Detectivity: ≤3,0x10^8, Time constant: ≤5
                      • InAs/InAsSb Photovoltaic Detectors

                      • Photovoltaic detectors (photodiodes) in which the semiconductor layer is made of InAs or InAsSb materials. Absorbed photons produce charge carriers that are collected at the ciodes have complex current voltage characteristics. The devices can operate either at flicker-free zero bias or with reverse voltage. These detectors are cadmium and mercury free. As a result, the detectors comply with the RoHS directive and can be used in the consumer market.
                          • PVA

                          • 2.0 – 5.5 µm, ambient temperature

                            PVA is an uncooled IR photovoltaic detector based on InAs alloy. The device is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive.

                            Features:

                            • High performance in the 2.0- 5.5 µm spectral range
                            • Ambient temperature operation
                            • Temperature stable up to 300 °C
                            • Complying with the RoHS Directive
                            • No bias required
                            • No 1/f noise

                            Models:

                            • PVA-3 Cooling: Uncooled, Immersion: No, Package: TO39, Time constant τ ≤20 ns
                            • PVA-5 Cooling: Uncooled, Immersion: No, Package: TO39, Time constant τ ≤60 ns
                          • PVA-2TE

                          • 2.0 – 5.5 µm, two-stage thermoelectrically cooled

                            PVA-2TE-3 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy. The device is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

                            Features:

                            • High performance in the 2.0- 5.5 µm spectral range
                            • Ambient temperature operation
                            • Temperature stable up to 300 °C
                            • Complying with the RoHS Directive
                            • No bias required
                            • No 1/f noise

                            Models:

                            • PVA-2TE-3 Two-stage TE cooled, Immersion: No, Package: TO8, Time constant τ ≤15 ns
                            • PVA-2TE-5 Two-stage TE cooled, Immersion: No, Package: TO8, Time constant τ ≤15ns
                          • PVIA

                          • 2.0 – 5.5 µm, ambient temperature, optically immersed

                            PVIA-3 is an uncooled IR photovoltaic detector based on InAs alloy, optically immersed in order to improve performance of the device. The detector is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive.

                            Features:

                            • High performance in the 2.0- 5.5 µm spectral range
                            • Two-stage thermoelectrically cooled
                            • Temperature stable up to 300 °C
                            • Complying with the RoHS Directive
                            • Hyperhemiimmersion microlens technology applied
                            • No bias required
                            • No 1/f noise

                            Models:

                            • PVA-3 Cooling: Uncooled, Immersion: No, Package: TO39, Time constant τ ≤20 ns
                            • PVA-5 Cooling: Uncooled, Immersion: No, Package: TO39, Time constant τ ≤60 ns
                            • PVA-2TE-3 Cooling: Two-stage TE cooled, Immersion: No, Package: TO8, Time constant τ ≤15 ns
                            • PVA-2TE-5 Cooling: Two-stage TE cooled, Immersion: No, Package: TO8, Time constant τ ≤15 ns
                            • PVIA-3 Cooling: Uncooled, Immersion: Yes, Package: TO39, Time constant τ ≤20 ns
                            • PVIA-5 Cooling: Uncooled, Immersion: Yes, Package: TO39, Time constant τ ≤15 ns
                            • PVIA-2TE-3 Cooling: Two-stage TE cooled, Immersion: Yes, Package: TO8, Time constant τ ≤15 ns
                            • PVIA-2TE-5 Cooling: Two-stage TE cooled, Immersion: Yes, Package: TO8, Time constant τ ≤5 ns
                          • PVIA-2TE

                          • 2.0 – 3.4 µm, two-stage thermoelectrically cooled

                            PVIA-2TE-3 is a two-stage thermoelectrically cooled IR photovoltaic detector based on InAs alloy, optically immersed in order to improve performance of the device. The detector is temperature stable up to 300°C and mechanically durable. It do not contain mercury or cadmium and is complying with the RoHS Directive. 3° wedged sapphire (wAl2O3) window prevents unwanted interference effects.

                            Features:

                            • High performance in the 2.0- 5.5 µm spectral range
                            • Two-stage thermoelectrically cooled
                            • Temperature stable up to 300 °C
                            • Complying with the RoHS Directive
                            • Hyperhemiimmersion microlens technology applied
                            • No bias required
                            • No 1/f noise

                            Models:

                            • PVA-3 Cooling: Uncooled, Immersion: No, Package: TO39, Time constant τ ≤20 ns
                            • PVA-5 Cooling: Uncooled, Immersion: No, Package: TO39, Time constant τ ≤60 ns
                            • PVA-2TE-3 Cooling: Two-stage TE cooled, Immersion: No, Package: TO8, Time constant τ ≤15 ns
                            • PVA-2TE-5 Cooling: Two-stage TE cooled, Immersion: No, Package: TO8, Time constant τ ≤15 ns
                            • PVIA-3 Cooling: Uncooled, Immersion: Yes, Package: TO39, Time constant τ ≤20 ns
                            • PVIA-5 Cooling: Uncooled, Immersion: Yes, Package: TO39, Time constant τ ≤15 ns
                            • PVIA-2TE-3 Cooling: Two-stage TE cooled, Immersion: Yes, Package: TO8, Time constant τ ≤15 ns
                            • PVIA-2TE-5 Cooling: Two-stage TE cooled, Immersion: Yes, Package: TO8, Time constant τ ≤5 ns
                        • HgCdTe (MCT) Arrays

                        • Infrared detectors in which the active surface consists of more than two elements. The offer includes quadrant geometry detectors based on photodiodes and photoconductors. Ideally suited for defense and security applications, and XY or differential measurements.
                            • PCQ-10,6

                              • Material: MCT
                              • Type: Quadrant geometry
                              • Immersion: Non-immersion

                              2.0 – 12.0 µm, ambient temperature, multiple junction quadrant

                              PVMQ-10.6 is an uncooled IR phtovoltaic multiple junction quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant geometry. The device is optimized for the maximum performance at 10.6 µm. The main application of PVMQ detector is laser beam profiling and positioning.

                              • Cooling: No
                              • Wavelength: 10,6
                              • Package: TO8
                              • Window: No
                              • Detectivity: ≥9,0x10^6
                              • Time constant: ≤5
                            • PVMQ-10,6

                              • Material: MCT
                              • Type: Quadrant geometry
                              • Immersion: Non-immersion

                              1.0 – 12.0 µm, ambient temperature, quadrant

                              PCQ-10.6 is uncooled IR photoconductive quadrant detector based on sophisticated HgCdTe heterostructures for the best performance and stability. Quadrant detector consists of four separate active elements arranged in a quadrant geometry. The device is optimized for the maximum performance at 10.6 µm. The detector should operate in optimum bias voltage and current readout mode. Performance at low frequencies is reduced due to 1/f noise. The main application of PCQ detectors is laser beam profiling and positioning.

                              • Cooling: No
                              • Wavelength: 10,6
                              • Package: TO8
                              • Window: No
                              • Detectivity: ≥1,0x10^7
                              • Time constant: ≤1,5
                          • Dedicated electronics

                          • We also offer dedicated electronics to our detectors. Preamplifiers, TEC controllers, power supplies and other accessories.
                              • Selected Line

                              • Infrared detection module integrates infrared photodetector, signal processing electronics, optics, heat dissipation systems and other components in common package. Products selected on the basis of high functionality and intended for many applications such as leak detection, gas analysis, temperature control for fast moving objects. Additional advantages of integration are improved high-frequency (HF) performance, output signal standardization and miniaturization. Selected Product Line guarantees a short order fulfillment date and an effective price.
                                  • UM Series

                                  • Integration of detector, preamplifier and TEC controller in compact, seald package has important advantages: miniaturization, beter high-frequency performance, immunity to electromagentic interferences (EMI), improved reliability, easy of use and reduced costs.

                                    There are three models in universal module series:

                                  • Optimized for operation in the spectral range of 3 um to 6.7 um and frequency bandwidth from DC to 1 MHz with photovoltaic detector optically immersed .
                                  • Optimized for operation in the spectral range of 2 um to 12 um and frequency bandwidth from DC to 100 MHz with photovoltaic multiple junction detector optically immersed 
                                  • Optimized for operation in the same spectral range and the same frequency bandwidth but with photovoltaic multiple junction detector without immersion microlens.
                                  • The output signal is standard voltage with a fifty Ohms impedance (50Ω). Additional DC output is available as a standard.

                                  • LabM Series

                                  • Programmable detection modules enable control of many parameters, such as bandwidth and gain, even during normal operation.

                                    This opens up completely new possibilities to designers of measuring systems.

                                    In a fully analogue input circuit, many switching elements are used, even with a variable, digitally-controlled capacitance to compensate the transimpedance input stage.

                                    The internal architecture is similar to standard detection modules. The main difference is that most of the internal functional blocks are configurable.

                                    To provide information about the module status it is equipped with bias and dc offset monitoring circuits. It is possible to build a system with adaptive gain or overload protection. Adjustable bandwidth can help to achieve the best possible noise performance for various signal types.

                                  • UHMS Series

                                  • Many applications require high-time resolution or, equivalently, high frequency-bandwidth optical detection.

                                    For these applications, VIGO developed ultra-high-speed detection modules series.

                                    It  was necessary to apply a special design, both in term electronics and mechanics. The system was designed to suport the propagation of high-speed signals, mounting the detector to the enclosure as close ad possible to a PCB board and input circuits. The manufacturing process requires fine tuning of the circuit with a specific detector.

                                    Additionally, it has DC monitor. It is a DC coupled signal, taken directly from the 1st stage preamplifier. One should take into account the 1 VDC offset at the DC monitor output.

                                    This output may be used for:

                                    • measure of the mean optical power by the detector,
                                    • photodetector’s dark current monitoring.

                                    UHSM is the one of the fastest long-wavelength infrared detection modules series on the market. 

                                  • MicroM Series

                                  • MicroM is a micro-size detection module with uncooled photovoltaic multiple junction detector. It is optimized for operation in the spectral range from 2 um to 12 µm and frequency bandwidth from DC to 10 MHz

                                    It is easy to assembly in space limited measuring systems of long wavelength infrared applications.

                                • Configurable Line

                                • A full range of preamplifiers dedicated to each type of VIGO System infrared detectors. The Configurable Line of modules enables the selection of the active area, type of preamplifier and bandwidth of the detection module. This makes it possible to adapt the module to the needs of your own application.
                                    • AIP

                                    • "All-in-one"

                                      Transimpedance preamplifier

                                      AIP is a new generation of transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non-biased VIGO detectors. AIP is „all‑in-one” device – a preamplifier is integrated with a fan and a thermoelectric cooler controller in a compact housing. It is very convenient and user‑friendly device, thus can be easily used in a variety of applications.

                                       

                                    • FIP

                                    • Fast

                                      Transimpedance preamplifier

                                      FIP is a series of high speed, transimpedance, AC coupled preamplifiers, intended to operate with biased TE cooled VIGO detectors. Fast preamplifier enables precise I-V conversion, detector biasing up to 800 mV and simultaneously maintains compact size and keeps current noise low. FIP is equipped with a fan and does not require additional heat dissipation. It is suitable for applications requiring wide frequency bandwidth. Additional DC output is available as an option

                                      Features:

                                      • Compact size
                                      • Wide bandwidth up to 1 GHz
                                      • Precise I-V conversion
                                      • Detector biasing possibility up to +800 mV
                                      • Low current noise
                                      • Co-operation with high resistance detectors
                                      • Effective cooling up to 4-stage TE coolers
                                    • MIP

                                    • Standard

                                      Transimpedance preamplifier

                                      MIP is a series of medium-size transimpedance, DC or AC coupled preamplifiers, intendend to operate with either biased or non-biased VIGO detectors. MIP is equipped with a fan and does not require any additional external heatsink. It is one of the most user-friendly preamplifier which surely facilitate work.

                                      Features:

                                      • Compact size
                                      • High signal-to-noise ratio
                                      • Bandwidth up to 250 MHz
                                      • Dedicated for operation with 2-, 3- and 4-stage TE cooled detectors
                                      • Custom configuration upon request
                                      • Additional accessories available
                                    • PIP

                                    • Programmable

                                      Transimpedance preamplifier

                                      PIP is a series of programmable “smart” preamplifiers. Due to the modern internal configuration, it offers extreme flexibility combined with superior signal parameters and high reliability. Built-in voltage monitor allows to check and optimize the working conditions (supply voltages, detector bias voltage, first and last stage output voltage offset etc.).
                                      There is also possible to change the gain, coupling (AC/DC), optimize the first stage transimpedance and manually or automatically suppress the voltage offset.
                                      Optimized parameters are stored into the internal EEPROM memory and automatically loaded after the power is on. Reset to default settings is available at any time. For detection module safety detector bias adjusting is blocked by default. User can request to enable this option while ordering.
                                      For proper operation PTCC-01 TEC controller is required.

                                      Features:

                                      • Compact size
                                      • High signal-to-noise ratio
                                      • Dedicated for operation with 2-, 3- and 4-stage TE cooled or uncooled detectors
                                      • Parameters settable by the user:
                                        • output voltage offset
                                        • gain (in 40 dB range)
                                        • bandwidth: 150 kHz, 1.5 MHz, 20 MHz, 1.5 MHz, 15 MHz, 200 MHz
                                        • coupling AC/DC
                                        • detector parameters (in some cases, with limitation)
                                      • Programmable modules and programmable controllers are interchangeable
                                      • Highly flexible configuration allows the user to adapt the module to variety of system parameters
                                      • Additional accessories available
                                    • SIP-TO8

                                    • Small, for TE cooled detectors

                                      Transimpedance preamplifier

                                      SIP-TO8 is a series of ultra-small transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non biased detectors. It is compatible with thermoelectrically cooled detectors in TO8 package. SIP-TO8 is dedicated for OEM applications and requires external heatsink (MHS-2). There is a possibility to adjust gain (devices with a frequency bandwidth up to 100 MHz).

                                      Features:

                                      • Very small size
                                      • High signal-to-noise ratio
                                      • Bandwidth up to 250 MHz
                                      • Dedicated for operation with 2-, 3- and 4-stage TE cooled detectors
                                      • Biased and non-biased detector compatible
                                      • Adjustable gain (for bandwidth up to 100 MHz)
                                      • Fully protected against exceeding supply voltage and reversing power supply polarity
                                      • Custom modifications upon request
                                      • Additional accessories available
                                    • SIP-TO8

                                    • Small, for TE cooled detectors

                                      Transimpedance preamplifier

                                      SIP-TO038 is a series of ultra-small transimpedance, AC or DC coupled preamplifiers. It is designed to operate with either biased or non biased detectors. It is compatible with VIGO thermoelectrically cooled detectors in TO39 package. SIP-TO39 is dedicated for OEM applications and does not require external heatsink. There is a possibility to adjust gain (devices with a frequency bandwidth up to 100 MHz).

                                      Features:

                                      • Very small size
                                      • High signal-to-noise ratio
                                      • Bandwidth up to 250 MHz
                                      • Dedicated for operation with 2-, 3- and 4-stage TE cooled detectors
                                      • Biased and non-biased detector compatible
                                      • Adjustable gain (for bandwidth up to 100 MHz)
                                      • Fully protected against exceeding supply voltage and reversing power supply polarity
                                      • Custom modifications upon request
                                      • Additional accessories available
                                  • Accessories

                                  • We offer all the necessary accessories for our products. Electrical accessories such as thermoelectric cooler controllers and preamp power supplies. Mechanical accessories such as brackets for detectors and infrared modules, base mounting systems and cables dedicated to our products.
                                      • Preamplifier Power Suply PPS-03

                                      • Universal

                                        PPS-03 is a small-size, easy to use and universal preamplifier power supply, designed to operate with VIGO detection module microM-10.6 and other devices containing uncooled detectors in TO39 packages and preamplifiers SIP-TO39.

                                        The PPS-03 preamplifier power supply is designed for supplying VIGO System IR Detection Modules included uncooled IR detectors.

                                        Features:

                                        • Dedicated for supplying uncooled detectors
                                        • Very small size
                                        • Low cost
                                      • Thermoelectric cooler controller PTCC-01

                                      • Programmable

                                        PTCC-01 is a series of programmable, precision low-noise thermoelectric cooler controllers. They are designed to operate with VIGO IR detection modules: LabM-I-6, LabM-I-10.6 and other devices containing TE cooled detectors and preamplifiers: PIP, MIP, FIP, SIP-TO8.

                                        Available Versions:

                                        PTCC-01-OEM

                                        • TEC controller and preamplifier power supply without housing
                                        • Configurable by PC software available on web page
                                        • Status LED indicator and status/data connector

                                        PTCC-01-BAS

                                        • TEC controller and preamplifier power supply encapsulated in a small size enclosure
                                        • Configurable by PC software available on web page
                                        • Status LED indicator

                                        PTCC-01-ADV

                                        • TEC controller and preamplifier power supply encapsulated in a small size enclosure
                                        • Configurable by build-in function keys or PC software available on web page
                                        • Status indicator LCD

                                        Features:

                                        • Low cost
                                        • Easy to use
                                        • Very small size
                                        • Low power consumption
                                        • High stability and precision
                                        • Dedicated for opeartion with preamplifiers integrated with with 2-, 3-, and 4-stage TE cooled detectors
                                        • Compatible with every variant of programmable preamplifier PIP; user can swap the modules and controllers
                                        • Modern architecture with digitally performed PID temperature control
                                        • Current / voltage / temperature monitor available with PC program
                                        • Overcurrent, overvoltage and overheating protection
                                        • Split grounds and filtering for EMC improvement
                                        • Firmware upgrade option available
                                        • Provides proper detector cooling
                                        • Preamplifier supply included
                                    • Applications

                                        • Industry

                                            • Gas analysis

                                            • The unique functionality of VIGO products is highly appreciated mainly on the volatile substance analyzers market. The detectors are used for monitoring process gases in chemical, refining, power generation, food and aerosol production industries. Photodiodes and photoresistors operate as a part of ultra-sensitive optoelectronic analytical devices in which the source of radiation are medium- and long-wave quantum cascade lasers (QCLs). Devices incorporating VIGO detectors are used as electronic “noses” – they can measure very small concentrations (ppb and ppt) of chemical substances in a mixture. Apart from process gases analysis, such systems are excellent for analyzing undesired vapors, such as pollutants and hazardous or flammable compounds, and for quality control – finding escapes and leakages. An invaluable advantage of optical detection modules is their insensitivity to electromagnetic interference. Such devices can be left in hazardous areas, and measurements can be taken from a safe place.
                                            • Laser power control and calibration

                                            • Powerful laser sources, mainly high-power CO2 and solid-state lasers, have for many years been used on quick and precise hard material treatment, large format cutting, engraving, cleaning and welding markets. Such sources operate within the mid infrared range, as high absorptivity of that type of radiation enables contact-free modification of materials by means of heating. A natural consequence of that situation is a demand for sensors operating within the same range of spectrum as lasers do, and enabling control of beam power and position. VIGO System offers a wide range of durable IR detectors optimized for the wavelengths of 2 to 16 µm. Fabrficated structures are characterized by small heat capacity and insignificant impact of thermal signal on optical signal. Depending on the customer’s requirements, various active area sizes are available. The VIGO research team prepares also multi-component linear or quadrant detectors, ideal for radiation source positioning.
                                            • Mid infrared spectroscopy

                                            • Climate change monitoring, manufacturing processes’ optimization, and gas emissions control are the key challenges connected with sustainable development and with the process of calming public feelings caused by industrialization. Quick and inexpensive mid infrared spectroscopy is a powerful analytical tool that may help with solving problems related to both economy and natural environment. Therefore, in 2016 VIGO joined an interdisciplinary European project named MIRPHAB, the purpose of which is to develop laser spectroscopy sensors operating within the wavelength range of 3 – 12 µm. The co-operation of all the 18 members will result in a product combining the most recent technical achievements of all of the partners. As a part of the co-operation, the Polish partner supplies its own, super-accurate infrared detectors. The final device will be available for all the interested contractors. VIGO’s participation in the initiative confirms the confidence placed in the company by all the leading manufacturers from the photonics and optoelectronics industries in the world.
                                          • Defence and Security

                                              • Early warning systems

                                              • On the modern battlefield, only defensive systems of the newest generation may compete. Innovative IR detectors are excellent components of such systems. One of particularly refined early warning systems, the intelligent OBRA system, uses photoresistors made by VIGO. The system consists of 4 to 8 detector heads and a smoke grenade launcher. Radiation received by the detectors is converted into a utility signal. If detectors are illuminated by ground-based laser rangefinders or missile homing devices, the system will immediately warn the crew about danger and deploy a smoke screen on the side on which the incoming danger has been detected. The system is installed on tanks and armored vehicles. That, however, is not the only defensive application of VIGO detectors. Sensors are used also as temperature sensors, for example for counting enemy units, and as preventive measures, particularly for disarming mines.
                                              • Smart munitions

                                              • Self-guided grenade launchers, missile launchers and long-range batteries use for homing a natural property of hot substances (understood as substances whose temperature exceeds 0 K), which is emission of electromagnetic waves within the infrared range. Military vehicles and aircraft are characterized by particularly high radiation radiance caused by engine and instruments operation. That enables detecting objects and distinguishing them from the surroundings with the use of infrared detectors. However, the target is not bound to stay in the same position after it is localized. Therefore, a system has been developed based on VIGO products, which ensures precise homing before the proper attack. The system uses a carrier missile that delivers explosive material to the target area. Next, the main charge is ejected and falls down at a controlled speed. After the sensors are activated and a ground target is detected, it is identified by means of comparing its parameters with information stored in a database. Finally, the proper attack is performed and the target is effectively neutralized.
                                              • Detecting trace amounts of drugs and explosives

                                              • Spectacular achievements have been made with the use of infrared detectors in the area of combating criminal groups producing explosives, weapons and drugs. In the process of manufacturing illegal products distinctive substances are produced, which can be detected by means of vapor or wastewater analysis. The idea of monitoring sewage systems and scanning air with the use of VIGO products has been implemented as a part of the European EMPHASIS project, which combines efforts of leading manufacturers on the chemicals analyzers market. The product to be developed under the program is to incorporate far infrared sensors that will enable detecting from large distances (100-400 m) explosives or their substrates in liquid and gaseous phases. Similar concepts have been presented under a project named HYPERION, the purpose of which is to develop methods for scanning areas where gas explosions, gas attacks or terrorist attacks occurred, and sending the collected information to the competent authorities.
                                            • Environmental Protection

                                                • Air quality analysis

                                                • Strict greenhouse gases emission standards translate into a dynamic increase in the number of devices for analyzing dusts and smog. Detection systems with thermal or laser sources of radiation and with infrared detectors supplied by VIGO System excel competing devices amongst others in terms of attainable sensitivity and speed of operation. Additional advantages include no need for the presence of reference gases during measurement, which is indispensable in the case of catalytic sensors, or service life longer than that of electrochemical meters. Year after year, a team of highly-qualified engineers from VIGO System have been delivering detectors of increasingly good quality, positively verified by demanding customers on the environmental protection market. Polish products have already performed well at research centers monitoring the composition of atmosphere, on factory and power plant chimneys, or in unmanned weather balloons.
                                                • Real-time water quality control

                                                • Access to clean, drinking water still remains a luxury for many inhabitants of Earth. Even in areas where plenty of H2O is available, there is a problem with analyzing the substance before it is consumed. Additionally, the risk of deliberate poisoning of reservoirs by groups of terrorists is growing, which in combination with slow operation of the conventional instruments for liquid analysis may result in a failure to detect the danger quickly enough. The present situation is to change thanks to the WaterSpy project, co-run by VIGO System. Under the project carried out by 9 entities from Europe, a technology for photonic analysis of liquids is being developed. The device being built, which will be both accurate and handy, will consist of fiber-coupled QCLs and detectors supplied by VIGO System.

                                                  Thanks to the use of ATR spectroscopy, a very good signal-to-noise ratio is to be obtained, and the method will not require pre-cleaning samples before measurement. Taking into account the present progress in works, we can say that the VIGO System detectors will soon guarantee supply of clean and refreshing water to citizens.

                                              • Healthcare

                                                      • Medical applications

                                                      • There are great hopes that the VIGO System detectors will perform well in medical applications. It is sufficient to say that the Polish sensors enable absolutely non-invasive blood analysis. Successful attempts at measuring oxygen saturation, blood flow, and even glucose content have been documented, with an error rate comparable to that shown by traditional glucose meters. All that has been achieved with the use of infrared detectors, by means of analyzing the spectrum of laser radiation reflected from parts of human body supplied with large amounts of blood.

                                                        There are also commercially available devices on the market that utilize technologies developed by VIGO System. Those are apparatuses for exhaled air analysis. They enable determining tumor marker levels, or diagnosing asthma or liver diseases. Such devices can be used also for monitoring the composition of air in operating rooms. In addition, the detectors supplied by VIGO System are used for controlling the power and positioning of laser beams used by surgeons, dentists or dermatologists.

                                                  • Transport

                                                      • Analysis of temperature distribution in fast moving objects

                                                      • The unbeatable speed and sensitivity of VIGO System detectors make them useful in applications where the response time is a matter of safety of hundreds of people, and possible failures and delays may result in losing enormous amounts of money. One of the main applications of PV photodiodes, which are the hearts of detection modules, is measuring the temperature of train sets. There are various types of heat sensors available on the market, but the unique VIGO System products excel the other devices based on pyroelectric bodies, bolometers and thermocouples in terms of response time, limit of detection, and resistance to external conditions. Detectors incorporated in devices installed between the rails enable contactless, real-time measurement of the temperature of wheels, brakes, shock absorbers and chassis of train sets. Information on possible overheating is immediately sent to competent units. The detectors are used also for scanning all the rolling stock before a train enters a tunnel. Thanks to the undisputable advantages of VIGO System products, they have been chosen for protecting train passengers all over Europe.
                                                      • Engine emissions’ monitoring and control

                                                      • Increasingly strict standards concerning the presence of carbon dioxide, nitrogen oxides and dusts in car exhaust gases force the vehicle manufacturers to use precise and reliable gas analyzers. That creates demand for spectroscopes that guarantee top accuracy. To respond to the demand from the market, VIGO System offers HgCdTe detectors which are perfect for spectrum analysis and show sensitivity within a broad wavelength range from 2 to 16 µm. They enable detection of all fuel combustion products, as the absorption lines of the substances searched for fall within the range of the wavelengths detected by the devices. That is how concentrations of CO2, CO, NOX and hydrocarbons can be monitored. Thanks to the excellent sensitivity, resolutions at the level of a single ppm or even ppt can be obtained, which means ultra-accurate estimation of trace amount of a substance. It is worth stressing that the detection limits of VIGO devices are at the top world levels, and reach the fundamental BLIP limits.
                                                      • Fuel quality assessment

                                                      • The gas analysis methods are also used for monitoring the composition and quality of liquids, including fuels and petroleum products. That is possible thanks to an absorption spectroscopy method, which is based on the unique character of absorption spectra of the analyzed substances. As each chemical compound absorbs the interacting radiation in a different and unique way, the composition of a given sample can be identified based on a principle similar to that behind fingerprints analysis. Wave sources in measuring instruments are thermal objects characterized by a wide emission spectrum, or monochromatic QCLs with high beam coherence and power. Depending on the application, the liquid to be analyzed is illuminated with radiation from one of the aforementioned sources. After it goes through the sample, the radiation illuminates an infrared detector, which thanks to advanced technological processes developed by VIGO is optimized for the wavelength, active surface area, cooling, immersion and dedicated electronics. All that enables simple and precise liquid analysis.
                                                    • Research and development

                                                        • Space exploration

                                                        • The VIGO System company is proud of its participation in international research projects whose purpose is to discover extraterrestrial life. Pioneering infrared detectors are currently used by NASA and ESA for exploring Mars under two different programs: MSL, where the detector is a part of a tunable laser spectrometer installed on the Curiosity rover, and ExoMars where products of VIGO System are incorporated in ICOTOM radiometers used for monitoring the external coating of landers. Devices contain uncooled photodiodes optimized for wavelengths of 4 and 8 μm. The instrument had to meet specific requirements for space technology, concerning in particular high resistance to mechanical impact, increased temperature and vacuum. A difficult task was to ensure very low fumigation of all the materials used for building the instrument. Positive results of detectors operation are an indication that the devices will be further used during space exploration expeditions.
                                                        • Precise, non-destructive spectroscopy

                                                        • More than 500 scientific publications have been prepared so far with the use of VIGO System detectors. Most of them involved refined and unique research methods aimed at improving the performance of gas analyzers. But the VIGO System sensors are successfully used also for radiocarbon dating or analyzing the chemical composition of minerals in archaeology.
                                                      • Epi-wafers: We serve the group III-V semiconductor markets with passion.

                                                      • We manufacture exceptionally high quality III-V epitaxial structures for use in sophisticated electronics such as lasers, photodetectors, transistors, photovoltaic cells and other devices. As one of the few companies on the market, we offer a broad range of high quality epi-wafers, which can be produced both in large volumes as well as in small test batches.
                                                          • GaAs based products

                                                          • AlGaAs/GaAs:

                                                            • QW edge emitting lasers
                                                            • VCSELs
                                                            • FETs, HEMTs, Schottky diodes
                                                            • varactors

                                                            GaAsP/GaAs: strained QW edge emitting lasers

                                                            InGaAsP/GaAs: QW lasers 808nm

                                                            InGaAs/AlGaAs/GaAs: strained QW lasers

                                                            InAs/GaAs: QD lasers

                                                            AlGaAs/GaAs: passive waveguides

                                                            Manufactured to specification


                                                          • InP based products

                                                          • InGaAsP/InP: strained or matched QW edge emitting lasers and SOAs 1300 - 1600nm

                                                            InGaAs/InP: QW edge emitting lasers

                                                            InGaAsP/InP: VCSEL structures

                                                            InAlGaAs/InP: edge emitting and VCSEL structures

                                                            InGaAsP/InP: passive devices

                                                            InGaAs: photodetectors

                                                            InAlAs/InGaAs/InP: HEMTs

                                                            Manufactured to specification